High-speed switching rectifier diode, featuring two silicon diode elements in a 3-terminal TO-236AB package. Offers a maximum repetitive peak reverse voltage of 100V and a maximum power dissipation of 0.25W. Designed for dual terminal operation with a maximum operating temperature of 150°C.
Quick Jump:
Technical Specifications
NXP BAV99,215 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
3
Terminal Position
DUAL
JEDEC Package Code
TO-236AB
Pin Count
3
Number of Elements
2
Diode Element Material
SILICON
Diode Type
RECTIFIER DIODE
Rep Pk Reverse Voltage-Max
100
Power Dissipation-Max
0.25
Compliance
RoHS
Yes
Eccn Code
EAR99
HTS Code
8541.10.00.70
REACH
Compliant
Military Spec
False
Datasheet
NXP BAV99,215 Datasheet
Download the complete datasheet for NXP BAV99,215 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.