NXP
BC556
PNP Bipolar Junction Transistor, 65V Collector Emitter Breakdown Voltage, 200mA Max Collector Current
The BC556 is a PNP bipolar junction transistor with a collector emitter breakdown voltage of 65V and a maximum collector current of 200mA. It has a high current gain of 125 and is suitable for general-purpose switching applications. The transistor is packaged in bulk and is available in a through-hole termination. It is compliant with RoHS regulations and has a maximum operating temperature of 150°C.
Current Rating-100mA
PolarityPNP
Power500mW
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Technical Specifications
NXP BC556 technical specifications.
General
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Voltage (VCEO) | -300mV |
| Current Rating | -100mA |
| hFE Min | 125 |
| Lead Free | Lead Free |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 500mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| DC Rated Voltage | -65V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BC556 Datasheet
Download the complete datasheet for NXP BC556 to view detailed technical specifications.
No datasheet is available for this part.
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