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Technical Specifications
NXP BC639,112 technical specifications.
General
Package/Case
TO-226-3
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
80V
Collector-emitter Voltage-Max
500mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
5V
Max Collector Current
1A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
830mW
Mount
Through Hole
Package Quantity
1000
Packaging
Bulk
RoHS Compliant
Yes
Transition Frequency
180MHz
Compliance
RoHS
Compliant
Datasheet
NXP BC639,112 Datasheet
Download the complete datasheet for NXP BC639,112 to view detailed technical specifications.
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