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Technical Specifications
NXP BC817DS115 technical specifications.
General
Package/Case
TSOP
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
700mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
700mV
Emitter Base Voltage (VEBO)
5V
Forward Current
120mA
Height
1mm
Lead Free
Lead Free
Length
3.1mm
Max Breakdown Voltage
45V
Max Collector Current
500mA
Max Forward Surge Current (Ifsm)
200mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
600mW
Max Repetitive Reverse Voltage (Vrrm)
40V
Mount
Surface Mount
Package Quantity
1
Packaging
Cut Tape
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
No
Transition Frequency
100MHz
Width
1.7mm
Compliance
RoHS
Compliant
Datasheet
NXP BC817DS115 Datasheet
Download the complete datasheet for NXP BC817DS115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.