NPN bipolar junction transistor (BJT) for general-purpose applications. Features a 45V collector-emitter breakdown voltage and 100mA maximum collector current. Offers a minimum hFE of 200 and a transition frequency of 100MHz. Packaged in a SOT-666 surface-mount case with tin plating, this RoHS compliant component operates from -65°C to 150°C with a maximum power dissipation of 300mW.
Frequency100MHz
PackageSOT-666
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP BC847BV,315 technical specifications.
General
| Package/Case | SOT-666 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 300mV |
| Contact Plating | Tin |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP BC847BV,315 Datasheet
Download the complete datasheet for NXP BC847BV,315 to view detailed technical specifications.
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