PNP bipolar junction transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage (VCEO) of 65V and a maximum collector current (IC) of 100mA. Offers a minimum DC current gain (hFE) of 220 and a gain bandwidth product of 100MHz. Packaged in a SOT-323 surface-mount case, this component operates within a temperature range of -65°C to 150°C and is RoHS compliant.
Frequency100MHz
PackageSOT-323
Current Rating-100mA
MountingSurface Mount
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Technical Specifications
NXP BC856BWT/R technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
80V
Collector Emitter Saturation Voltage
-250mV
Collector Emitter Voltage (VCEO)
65V
Collector-emitter Voltage-Max
65V
Current Rating
-100mA
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
100MHz
hFE Min
220
Lead Free
Lead Free
Max Collector Current
100mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
200mW
Radiation Hardening
No
RoHS Compliant
Yes
DC Rated Voltage
-65V
Compliance
RoHS
Compliant
Datasheet
NXP BC856BWT/R Datasheet
Download the complete datasheet for NXP BC856BWT/R to view detailed technical specifications.
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