PNP bipolar junction transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage (VCEO) of 65V and a maximum collector current (IC) of 100mA. Offers a minimum DC current gain (hFE) of 220 and a gain bandwidth product of 100MHz. Packaged in a SOT-323 surface-mount case, this component operates within a temperature range of -65°C to 150°C and is RoHS compliant.
Frequency100MHz
PackageSOT-323
Current Rating-100mA
MountingSurface Mount
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Technical Specifications
NXP BC856BWT/R technical specifications.
General
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector-emitter Voltage-Max | 65V |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 220 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -65V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BC856BWT/R Datasheet
Download the complete datasheet for NXP BC856BWT/R to view detailed technical specifications.
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