PNP bipolar junction transistor (BJT) for surface mount applications. Features a 45V collector-emitter breakdown voltage and a 100mA maximum collector current. Operates with a 5V emitter-base voltage and a 45V collector-emitter voltage. Offers a transition frequency of 100MHz and a maximum power dissipation of 150mW. Packaged in a tape and reel with tin contact plating.
Frequency100MHz
PackageSC
MountingSurface Mount
PolarityPNP
Quick Jump:
Technical Specifications
NXP BC857AT115 technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 400mV |
| Contact Plating | Tin |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP BC857AT115 Datasheet
Download the complete datasheet for NXP BC857AT115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
