The NXP BC858W/TR is a PNP transistor with a collector-emitter voltage maximum of 30V and a continuous collector current of 100mA. It features a gain bandwidth product of 100MHz and a minimum current gain of 125. The device is packaged in a lead-free SOT-323 package and is rated for operation between -65°C and 150°C. The maximum power dissipation is 200mW.
PackageSOT-323
Current Rating-100mA
PolarityPNP
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Technical Specifications
NXP BC858W/TR technical specifications.
General
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector-emitter Voltage-Max | 30V |
| Continuous Collector Current | 100mA |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 125 |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| DC Rated Voltage | -30V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BC858W/TR Datasheet
Download the complete datasheet for NXP BC858W/TR to view detailed technical specifications.
No datasheet is available for this part.