The NXP BC859BW,115 is a PNP transistor with a collector base voltage of 30V and a collector emitter voltage of 30V. It has a maximum collector current of 200mA and a maximum power dissipation of 200mW. The transistor is packaged in a SC package and is suitable for operation over a temperature range of -65°C to 150°C. It is lead free and RoHS compliant.
Frequency100MHz
PackageSC
MountingSurface Mount
PolarityPNP
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Technical Specifications
NXP BC859BW,115 technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | -30V |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 220 |
| Lead Free | Lead Free |
| Max Collector Current | -200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 200mW |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
NXP BC859BW,115 Datasheet
Download the complete datasheet for NXP BC859BW,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.