The BC859CT/R is a PNP transistor with a collector base voltage of 30V and collector emitter voltage of 30V. It has a maximum collector current of 100mA and a maximum frequency of 100MHz. The transistor is packaged in a TO-236AB surface mount package and has a power dissipation of 250mW. It is rated for operation between -65°C and 150°C and is compliant with RoHS regulations.
Frequency100MHz
PackageTO-236AB
Current Rating-100mA
MountingSurface Mount
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Technical Specifications
NXP BC859CT/R technical specifications.
General
| Package/Case | TO-236AB |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Polarity | PNP |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -30V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BC859CT/R Datasheet
Download the complete datasheet for NXP BC859CT/R to view detailed technical specifications.
No datasheet is available for this part.