NPN bipolar junction transistor (BJT) in a TO-236AB surface mount package. Features a maximum collector current of 500mA, collector-emitter voltage (VCEO) of 45V, and a transition frequency of 100MHz. Offers a minimum DC current gain (hFE) of 100 and a maximum power dissipation of 250mW. Operates across a wide temperature range from -65°C to 150°C.
NXP BCX19,235 technical specifications.
| Package/Case | TO-236AB |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 620mV |
| Contact Plating | Tin |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 100 |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| RoHS | Compliant |
Download the complete datasheet for NXP BCX19,235 to view detailed technical specifications.
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