NPN bipolar junction transistor (BJT) in a TO-236AB surface mount package. Features a maximum collector current of 500mA, collector-emitter voltage (VCEO) of 45V, and a transition frequency of 100MHz. Offers a minimum DC current gain (hFE) of 100 and a maximum power dissipation of 250mW. Operates across a wide temperature range from -65°C to 150°C.
Frequency100MHz
PackageTO-236AB
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP BCX19,235 technical specifications.
General
Package/Case
TO-236AB
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
620mV
Contact Plating
Tin
Element Configuration
Single
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
hFE Min
100
Max Collector Current
500mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
250mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
10000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
250mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
100MHz
Compliance
RoHS
Compliant
Datasheet
NXP BCX19,235 Datasheet
Download the complete datasheet for NXP BCX19,235 to view detailed technical specifications.
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