N-channel RF MOSFET transistor for high-frequency applications, operating up to 1GHz with a 20dB gain. Features a 7V drain-to-source voltage and 30mA continuous drain current. Surface mountable in a SOT-143R package, this RoHS compliant component offers a 1.7dB noise figure and 200mW output power, with a wide operating temperature range from -65°C to 150°C.
Frequency800MHz
Voltage Rating7V
Current Rating30mA
MountingSurface Mount
Quick Jump:
Technical Specifications
NXP BF1105R,215 technical specifications.
General
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 30mA |
| Current Rating | 30mA |
| Drain to Source Voltage (Vdss) | 7V |
| DS Breakdown Voltage-Min | 7V |
| Frequency | 800MHz |
| Gain | 20dB |
| Gate to Source Voltage (Vgs) | 7V |
| Lead Free | Lead Free |
| Max Frequency | 1GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Noise Figure | 1.7dB |
| Number of Elements | 1 |
| Output Power | 200mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 5V |
| Voltage Rating | 7V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BF1105R,215 Datasheet
Download the complete datasheet for NXP BF1105R,215 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
