N-channel MOSFET transistor for surface mount applications, featuring a 7V drain-to-source voltage and 30mA continuous drain current. Operates up to 1GHz with a gain of 20dB and a noise figure of 1.7dB at 800MHz. Designed for a wide temperature range from -65°C to 150°C, with a maximum power dissipation of 200mW. Contact plating is tin, matte, and the component is lead-free.
Frequency800MHz
Voltage Rating7V
Current Rating30mA
MountingSurface Mount
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Technical Specifications
NXP BF1105WR115 technical specifications.
General
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 30mA |
| Current Rating | 30mA |
| Drain to Source Voltage (Vdss) | 7V |
| Frequency | 800MHz |
| Gain | 20dB |
| Gate to Source Voltage (Vgs) | 7V |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Frequency | 1GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Noise Figure | 1.7dB |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Test Voltage | 5V |
| Voltage Rating | 7V |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BF1105WR115 Datasheet
Download the complete datasheet for NXP BF1105WR115 to view detailed technical specifications.
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