The BF1108R,215 is a single N-channel MOSFET with a voltage rating of 3V and a continuous drain current of 10mA. It features a drain to source resistance of 20 ohms and a gate to source voltage of 7V. The device is packaged in a surface mount package with dimensions of 1mm height, 3mm length, and 1.4mm width. It operates over a temperature range of -65°C to 150°C and is compliant with RoHS regulations.
Voltage Rating3V
Current Rating10mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
NXP BF1108R,215 technical specifications.
General
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 10mA |
| Current Rating | 10mA |
| Drain to Source Resistance | 20R |
| Drain to Source Voltage (Vdss) | 3V |
| DS Breakdown Voltage-Min | 3V |
| Gate to Source Voltage (Vgs) | 7V |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Voltage Rating | 3V |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BF1108R,215 Datasheet
Download the complete datasheet for NXP BF1108R,215 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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