N-channel RF MOSFET transistor designed for surface mount applications. Features a 6V drain-source voltage (Vdss) and 30mA continuous drain current (ID). Operates at frequencies up to 400MHz with a typical gain of 30dB and a low noise figure of 1.3dB. Packaged in TSSOP with tin, matte contact plating, supplied on tape and reel.
Frequency400MHz
PackageTSSOP
Voltage Rating6V
Current Rating30mA
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Technical Specifications
NXP BF1205C,115 technical specifications.
General
| Package/Case | TSSOP |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 30mA |
| Current Rating | 30mA |
| Drain to Source Voltage (Vdss) | 6V |
| Frequency | 400MHz |
| Gain | 30dB |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 1mm |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 180mW |
| Mount | Surface Mount |
| Noise Figure | 1.3dB |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 5V |
| Voltage Rating | 6V |
| Weight | 0.000265oz |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BF1205C,115 Datasheet
Download the complete datasheet for NXP BF1205C,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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