Dual-gate N-channel MOSFET in a SOT-666 surface-mount package. Features 6V drain-to-source voltage (Vdss) and 30mA continuous drain current (ID). Operates up to 400MHz with a 32dB gain and a 0.9dB noise figure. Maximum power dissipation is 180mW, with operating temperatures from -65°C to 150°C. Tin-matte contact plating and RoHS compliance.
Frequency400MHz
PackageSOT-666
Voltage Rating6V
Current Rating30mA
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Technical Specifications
NXP BF1208D,115 technical specifications.
General
| Package/Case | SOT-666 |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 30mA |
| Current Rating | 30mA |
| Drain to Source Voltage (Vdss) | 6V |
| Frequency | 400MHz |
| Gain | 32dB |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 0.6mm |
| Length | 1.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 180mW |
| Mount | Surface Mount |
| Noise Figure | 0.9dB |
| Number of Elements | 2 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 5V |
| Voltage Rating | 6V |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BF1208D,115 Datasheet
Download the complete datasheet for NXP BF1208D,115 to view detailed technical specifications.
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