N-channel dual-gate MOSFET for RF applications, featuring a 6V drain-to-source voltage and 30mA continuous drain current. Operates up to 400MHz with a 29dB gain and a low 0.9dB noise figure. Surface mountable in a compact SOT343R package with tin-matte contact plating. Rated for -65°C to 150°C operating temperature and 180mW power dissipation.
Frequency400MHz
Voltage Rating6V
Current Rating30mA
MountingSurface Mount
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Technical Specifications
NXP BF1211WR,115 technical specifications.
General
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 30mA |
| Current Rating | 30mA |
| Drain to Source Voltage (Vdss) | 6V |
| DS Breakdown Voltage-Min | 6V |
| Frequency | 400MHz |
| Gain | 29dB |
| Gate to Source Voltage (Vgs) | 6V |
| Height | 1mm |
| Input Capacitance | 1.1pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 180mW |
| Mount | Surface Mount |
| Noise Figure | 0.9dB |
| Output Power | 180mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Test Voltage | 5V |
| Voltage Rating | 6V |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BF1211WR,115 Datasheet
Download the complete datasheet for NXP BF1211WR,115 to view detailed technical specifications.
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