N-channel RF transistor in a TO-226-3 (TO-92) package, featuring through-hole mounting and tin contact plating. This device offers a drain-source voltage (Vdss) of 30V and a continuous drain current (ID) of 6.5mA, with a maximum power dissipation of 300mW. Operating across a wide temperature range from -65°C to 150°C, it achieves a noise figure of 1.5dB at 100MHz. The component is RoHS compliant and supplied in bulk packaging.
Frequency100MHz
PackageTO-226-3
Voltage Rating30V
Current Rating6.5mA
Quick Jump:
Technical Specifications
NXP BF245A,112 technical specifications.
General
Package/Case
TO-226-3
Contact Plating
Tin
Continuous Drain Current (ID)
6.5mA
Current Rating
6.5mA
Drain to Source Voltage (Vdss)
30V
Frequency
100MHz
Gate to Source Voltage (Vgs)
-30V
Height
5.2mm
Lead Free
Lead Free
Length
4.8mm
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
300mW
Mount
Through Hole
Noise Figure
1.5dB
Package Quantity
1000
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
300mW
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Test Voltage
15V
Voltage Rating
30V
Width
4.2mm
Compliance
RoHS
Compliant
Datasheet
NXP BF245A,112 Datasheet
Download the complete datasheet for NXP BF245A,112 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
