N-channel RF transistor in a TO-226-3 (TO-92) package, featuring through-hole mounting and tin contact plating. This device offers a drain-source voltage (Vdss) of 30V and a continuous drain current (ID) of 6.5mA, with a maximum power dissipation of 300mW. Operating across a wide temperature range from -65°C to 150°C, it achieves a noise figure of 1.5dB at 100MHz. The component is RoHS compliant and supplied in bulk packaging.
Frequency100MHz
PackageTO-226-3
Voltage Rating30V
Current Rating6.5mA
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Technical Specifications
NXP BF245A,112 technical specifications.
General
| Package/Case | TO-226-3 |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 6.5mA |
| Current Rating | 6.5mA |
| Drain to Source Voltage (Vdss) | 30V |
| Frequency | 100MHz |
| Gate to Source Voltage (Vgs) | -30V |
| Height | 5.2mm |
| Lead Free | Lead Free |
| Length | 4.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300mW |
| Mount | Through Hole |
| Noise Figure | 1.5dB |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 300mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Test Voltage | 15V |
| Voltage Rating | 30V |
| Width | 4.2mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BF245A,112 Datasheet
Download the complete datasheet for NXP BF245A,112 to view detailed technical specifications.
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