
N-channel RF transistor in a TO-226-3 (TO-92) package, featuring a 30V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 15mA. This through-hole mount component operates up to 100MHz with a low noise figure of 1.5dB. It offers a wide operating temperature range from -65°C to 150°C and a maximum power dissipation of 300mW. The component is lead-free, RoHS compliant, and has tin contact plating.
NXP BF245B,112 technical specifications.
| Package/Case | TO-226-3 |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 15mA |
| Current Rating | 15mA |
| Drain to Source Voltage (Vdss) | 30V |
| Frequency | 100MHz |
| Gate to Source Voltage (Vgs) | -30V |
| Height | 5.2mm |
| Lead Free | Lead Free |
| Length | 4.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300mW |
| Mount | Through Hole |
| Noise Figure | 1.5dB |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 15V |
| Voltage Rating | 30V |
| Weight | 0.016oz |
| Width | 4.2mm |
| RoHS | Compliant |
Download the complete datasheet for NXP BF245B,112 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
