N-channel RF transistor in a TO-226-3 (TO-92) package, featuring a 30V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 15mA. This through-hole mount component operates up to 100MHz with a low noise figure of 1.5dB. It offers a wide operating temperature range from -65°C to 150°C and a maximum power dissipation of 300mW. The component is lead-free, RoHS compliant, and has tin contact plating.
Frequency100MHz
PackageTO-226-3
Voltage Rating30V
Current Rating15mA
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Technical Specifications
NXP BF245B,112 technical specifications.
General
Package/Case
TO-226-3
Contact Plating
Tin
Continuous Drain Current (ID)
15mA
Current Rating
15mA
Drain to Source Voltage (Vdss)
30V
Frequency
100MHz
Gate to Source Voltage (Vgs)
-30V
Height
5.2mm
Lead Free
Lead Free
Length
4.8mm
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
300mW
Mount
Through Hole
Noise Figure
1.5dB
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
RoHS Compliant
Yes
Test Voltage
15V
Voltage Rating
30V
Weight
0.016oz
Width
4.2mm
Compliance
RoHS
Compliant
Datasheet
NXP BF245B,112 Datasheet
Download the complete datasheet for NXP BF245B,112 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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