The BF421,112 is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 300V and a maximum collector current of 50mA. It has a maximum power dissipation of 830mW and is packaged in a TO-226-3 case with a through-hole mount. The transistor is RoHS compliant and has a transition frequency of 60MHz.
PackageTO-226-3
MountingThrough Hole
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Technical Specifications
NXP BF421,112 technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Emitter Breakdown Voltage | 300V |
| Collector-emitter Voltage-Max | 600mV |
| Max Collector Current | 50mA |
| Max Power Dissipation | 830mW |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Bulk |
| RoHS Compliant | Yes |
| Transition Frequency | 60MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP BF421,112 Datasheet
Download the complete datasheet for NXP BF421,112 to view detailed technical specifications.
No datasheet is available for this part.
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