N-channel JFET transistor for surface mount applications. Features a 20V drain-to-source voltage (Vdss) and 30mA continuous drain current (ID). Operates up to 100MHz with a low noise figure of 1.5dB. Housed in a compact TO-236AB package with tin plating, this RoHS compliant component offers a maximum power dissipation of 250mW and operates across a wide temperature range from -65°C to 150°C.
Frequency100MHz
PackageTO-236AB
Voltage Rating20V
Current Rating30mA
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Technical Specifications
NXP BF511,215 technical specifications.
General
Package/Case
TO-236AB
Contact Plating
Tin
Continuous Drain Current (ID)
30mA
Current Rating
30mA
Drain to Source Voltage (Vdss)
20V
Frequency
100MHz
Gate to Source Voltage (Vgs)
20V
Height
1mm
Lead Free
Lead Free
Length
3mm
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
250mW
Mount
Surface Mount
Noise Figure
1.5dB
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
250mW
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Test Voltage
10V
Voltage Rating
20V
Weight
0.00709oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
NXP BF511,215 Datasheet
Download the complete datasheet for NXP BF511,215 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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