N-channel JFET transistor for surface mount applications. Features a 20V drain-to-source voltage (Vdss) and 30mA continuous drain current (ID). Operates up to 100MHz with a low noise figure of 1.5dB. Housed in a compact TO-236AB package with tin plating, this RoHS compliant component offers a maximum power dissipation of 250mW and operates across a wide temperature range from -65°C to 150°C.
Frequency100MHz
PackageTO-236AB
Voltage Rating20V
Current Rating30mA
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Technical Specifications
NXP BF511,215 technical specifications.
General
| Package/Case | TO-236AB |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 30mA |
| Current Rating | 30mA |
| Drain to Source Voltage (Vdss) | 20V |
| Frequency | 100MHz |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Noise Figure | 1.5dB |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 250mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Test Voltage | 10V |
| Voltage Rating | 20V |
| Weight | 0.00709oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BF511,215 Datasheet
Download the complete datasheet for NXP BF511,215 to view detailed technical specifications.
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