PNP Silicon Bipolar Junction Transistor for general-purpose small signal applications. Features a 300V Collector-Emitter Voltage (VCEO) and a 50mA Max Collector Current. Operates with a 60MHz Gain Bandwidth Product and offers a minimum hFE of 50. Packaged in a SOT-23 surface-mount plastic case, this component is lead-free, RoHS compliant, and rated for operation between -65°C and 150°C.
Frequency60MHz
PackageSOT-23
Current Rating-50mA
MountingSurface Mount
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Technical Specifications
NXP BF821T/R technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Saturation Voltage | -800mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 300V |
| Current Rating | -50mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 60MHz |
| Gain Bandwidth Product | 60MHz |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Frequency | 60MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -300V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BF821T/R Datasheet
Download the complete datasheet for NXP BF821T/R to view detailed technical specifications.
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