N-channel dual-gate MOSFET, SOT-143 4-pin package, designed for RF applications. Features a 7V drain-to-source voltage rating and 40mA continuous drain current. Operates up to 1GHz with a 2dB noise figure. Surface mountable with tin, matte contact plating, and a maximum power dissipation of 200mW. Suitable for operation between -65°C and 150°C.
Frequency800MHz
PackageTO-253-4
Voltage Rating7V
Current Rating40mA
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Technical Specifications
NXP BF909,215 technical specifications.
General
| Package/Case | TO-253-4 |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 40mA |
| Current Rating | 40mA |
| Drain to Source Voltage (Vdss) | 7V |
| Frequency | 800MHz |
| Gate to Source Voltage (Vgs) | 6V |
| Height | 1.1mm |
| Length | 3mm |
| Max Frequency | 1GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Noise Figure | 2dB |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 5V |
| Voltage Rating | 7V |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BF909,215 Datasheet
Download the complete datasheet for NXP BF909,215 to view detailed technical specifications.
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