
N-channel dual-gate MOSFET, surface mount, SOT-143 package. Features 20V drain-to-source voltage, 30mA continuous drain current, and 200MHz operating frequency. Delivers 25dB power gain with a 1dB noise figure. Operates from -65°C to 150°C, with 200mW power dissipation. Tin, matte contact plating, lead-free, and RoHS compliant.
NXP BF994S,215 technical specifications.
| Package/Case | SOT |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 30mA |
| Current Rating | 30mA |
| Drain to Source Voltage (Vdss) | 20V |
| DS Breakdown Voltage-Min | 6V |
| Frequency | 200MHz |
| Gain | 25dB |
| Gate to Source Voltage (Vgs) | 6V |
| Height | 1mm |
| Input Capacitance | 1.2pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Noise Figure | 1dB |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 200mW |
| Power Gain | 25dB |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 15V |
| Voltage Rating | 20V |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for NXP BF994S,215 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
