N-channel dual-gate MOSFET, SOT-143 4-pin package, ideal for RF applications up to 1GHz. Features a continuous drain current of 30mA, drain-to-source voltage of 12V, and a low noise figure of 0.6dB. Operates across a wide temperature range from -65°C to 150°C with a maximum power dissipation of 200mW. This surface mount component is RoHS compliant with tin, matte contact plating.
Frequency200MHz
PackageTO-253-4
Voltage Rating12V
Current Rating30mA
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Technical Specifications
NXP BF998,215 technical specifications.
General
| Package/Case | TO-253-4 |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 30mA |
| Current Rating | 30mA |
| Drain to Source Voltage (Vdss) | 12V |
| DS Breakdown Voltage-Min | 6V |
| Frequency | 200MHz |
| Gate to Source Voltage (Vgs) | 6V |
| Lead Free | Lead Free |
| Max Frequency | 1GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Noise Figure | 0.6dB |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Test Voltage | 8V |
| Voltage Rating | 12V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BF998,215 Datasheet
Download the complete datasheet for NXP BF998,215 to view detailed technical specifications.
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