N-channel dual-gate MOSFET for RF applications, featuring a maximum operating frequency of 1GHz and a continuous drain current of 30mA. This surface mount component offers a drain-to-source voltage rating of 12V and a low noise figure of 0.6dB. Operating across a wide temperature range from -65°C to 150°C, it boasts an input capacitance of 1.2pF and is RoHS compliant with tin, matte contact plating.
Frequency200MHz
Voltage Rating12V
Current Rating30mA
MountingSurface Mount
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Technical Specifications
NXP BF998WR,115 technical specifications.
General
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 30mA |
| Current Rating | 30mA |
| Drain to Source Voltage (Vdss) | 12V |
| Frequency | 200MHz |
| Gate to Source Voltage (Vgs) | 6V |
| Height | 1mm |
| Input Capacitance | 1.2pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Frequency | 1GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Noise Figure | 0.6dB |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 8V |
| Voltage Rating | 12V |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BF998WR,115 Datasheet
Download the complete datasheet for NXP BF998WR,115 to view detailed technical specifications.
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