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Technical Specifications
NXP BFG10,215 technical specifications.
General
| Package/Case | TO-253-4 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 8V |
| Collector-emitter Voltage-Max | 8V |
| Contact Plating | Tin, Matte |
| Continuous Collector Current | 250mA |
| Emitter Base Voltage (VEBO) | 2.5V |
| Gain | 7dB |
| hFE Min | 25 |
| Max Breakdown Voltage | 8V |
| Max Collector Current | 250mA |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 400mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 400mW |
| RoHS Compliant | Yes |
| Transition Frequency | 1.9GHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP BFG10,215 Datasheet
Download the complete datasheet for NXP BFG10,215 to view detailed technical specifications.
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