BFG10/X,215

RF Bipolar Transistors Single NPN 8V 250mA 400mW 25

PackageTO-253-4

MountingSurface Mount

PolarityNPN

Power400mW

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NXP BFG10/X,215 technical specifications.

Package/Case	TO-253-4
Collector Base Voltage (VCBO)	20V
Collector Emitter Breakdown Voltage	8V
Collector-emitter Voltage-Max	8V
Contact Plating	Tin, Matte
Continuous Collector Current	250mA
Emitter Base Voltage (VEBO)	2.5V
Gain	7dB
hFE Min	25
Lead Free	Lead Free
Max Breakdown Voltage	8V
Max Collector Current	250mA
Max Operating Temperature	175°C
Min Operating Temperature	-65°C
Max Power Dissipation	400mW
Mount	Surface Mount
Package Quantity	1
Packaging	Tape and Reel
Polarity	NPN
Power Dissipation	400mW
Transition Frequency	1.9GHz