NPN bipolar junction transistor (BJT) designed for high-frequency applications, operating up to 8GHz. Features a maximum collector-emitter voltage of 10V and a continuous collector current of 100mA. Packaged in a SOT-223 surface-mount case with tin plating, this component offers a maximum power dissipation of 1W and operates within a temperature range of -65°C to 175°C. RoHS compliant and lead-free.
Frequency8GHz
PackageSOT-223
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP BFG198,115 technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
20V
Collector Emitter Breakdown Voltage
10V
Collector Emitter Voltage (VCEO)
10V
Collector-emitter Voltage-Max
10V
Contact Plating
Tin
Continuous Collector Current
100mA
Emitter Base Voltage (VEBO)
2.5V
Frequency
8GHz
Height
1.7mm
hFE Min
40
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
10V
Max Collector Current
100mA
Max Frequency
8GHz
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
1
Operating Frequency
8000 MHz
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
8GHz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
NXP BFG198,115 Datasheet
Download the complete datasheet for NXP BFG198,115 to view detailed technical specifications.
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