NPN bipolar junction transistor (BJT) designed for high-frequency applications, operating up to 8GHz. Features a maximum collector-emitter voltage of 10V and a continuous collector current of 100mA. Packaged in a SOT-223 surface-mount case with tin plating, this component offers a maximum power dissipation of 1W and operates within a temperature range of -65°C to 175°C. RoHS compliant and lead-free.
Frequency8GHz
PackageSOT-223
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP BFG198,115 technical specifications.
General
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 10V |
| Collector Emitter Voltage (VCEO) | 10V |
| Collector-emitter Voltage-Max | 10V |
| Contact Plating | Tin |
| Continuous Collector Current | 100mA |
| Emitter Base Voltage (VEBO) | 2.5V |
| Frequency | 8GHz |
| Height | 1.7mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Breakdown Voltage | 10V |
| Max Collector Current | 100mA |
| Max Frequency | 8GHz |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Operating Frequency | 8000 MHz |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 8GHz |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BFG198,115 Datasheet
Download the complete datasheet for NXP BFG198,115 to view detailed technical specifications.
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