The BFG31,115 is a PNP bipolar junction transistor with a collector base voltage of 20V and collector-emitter voltage of 15V. It can handle a continuous collector current of 100mA and a maximum power dissipation of 1W. The transistor is packaged in a SOT-223 case and is lead-free. It operates over a temperature range of -65°C to 150°C and has a gain bandwidth product of 5GHz. The BFG31,115 is RoHS compliant and available in quantities of 1000 on cut tape.
Frequency5000 MHz
PackageSOT-223
PolarityPNP
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Technical Specifications
NXP BFG31,115 technical specifications.
General
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 20V |
| Collector-emitter Voltage-Max | 15V |
| Continuous Collector Current | 100mA |
| Emitter Base Voltage (VEBO) | 3V |
| Gain Bandwidth Product | 5GHz |
| Height | 1.7mm |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Operating Frequency | 5000 MHz |
| Package Quantity | 1000 |
| Packaging | Cut Tape |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Weight | 0.003527oz |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BFG31,115 Datasheet
Download the complete datasheet for NXP BFG31,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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