
NPN bipolar junction transistor (BJT) for surface mount applications, featuring a 14GHz gain bandwidth product and transition frequency. This component offers a maximum collector-emitter voltage of 6V and a continuous collector current of 10mA, with a minimum hFE of 60 and a gain of 18dB. Encased in a SOT-343 package with tin plating, it operates from -65°C to 150°C and has a maximum power dissipation of 60mW.
NXP BFG310W/XR,115 technical specifications.
Download the complete datasheet for NXP BFG310W/XR,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
