NPN RF transistor designed for wideband applications, operating at frequencies up to 4 GHz. Features a 15dB gain and a 1W maximum power dissipation. This surface mount component is housed in an SC package with tin contact plating and offers a continuous collector current of 150mA. With a collector-emitter voltage of 18V and an operating temperature range of -65°C to 175°C, it is RoHS compliant.
Frequency4GHz
PackageSC
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP BFG35,115 technical specifications.
General
Package/Case
SC
Collector Base Voltage (VCBO)
25V
Collector Emitter Breakdown Voltage
18V
Collector Emitter Voltage (VCEO)
18V
Collector-emitter Voltage-Max
18V
Contact Plating
Tin
Continuous Collector Current
150mA
Emitter Base Voltage (VEBO)
2V
Frequency
4GHz
Gain
15dB
Gain Bandwidth Product
4GHz
Height
1.7mm
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
18V
Max Collector Current
150mA
Max Frequency
4GHz
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
1
Operating Frequency
4000 MHz
Output Power
1W
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
4GHz
Weight
0.006632oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
NXP BFG35,115 Datasheet
Download the complete datasheet for NXP BFG35,115 to view detailed technical specifications.
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