
NPN RF transistor designed for wideband applications, operating at frequencies up to 4 GHz. Features a 15dB gain and a 1W maximum power dissipation. This surface mount component is housed in an SC package with tin contact plating and offers a continuous collector current of 150mA. With a collector-emitter voltage of 18V and an operating temperature range of -65°C to 175°C, it is RoHS compliant.
NXP BFG35,115 technical specifications.
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 25V |
| Collector Emitter Breakdown Voltage | 18V |
| Collector Emitter Voltage (VCEO) | 18V |
| Collector-emitter Voltage-Max | 18V |
| Contact Plating | Tin |
| Continuous Collector Current | 150mA |
| Emitter Base Voltage (VEBO) | 2V |
| Frequency | 4GHz |
| Gain | 15dB |
| Gain Bandwidth Product | 4GHz |
| Height | 1.7mm |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Breakdown Voltage | 18V |
| Max Collector Current | 150mA |
| Max Frequency | 4GHz |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Operating Frequency | 4000 MHz |
| Output Power | 1W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 4GHz |
| Weight | 0.006632oz |
| Width | 3.7mm |
| RoHS | Compliant |
Download the complete datasheet for NXP BFG35,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
