NPN bipolar junction transistor (BJT) for high-frequency applications, featuring a 22GHz transition frequency and 4.5V collector-emitter breakdown voltage. This surface mount device offers a maximum collector current of 12mA and a gain of 21dB, with a maximum power dissipation of 54mW. Designed for operation across a wide temperature range from -65°C to 150°C, it is packaged in a compact SOT343R outline with tin contact plating and supplied on tape and reel.
Frequency22GHz
MountingSurface Mount
PolarityNPN
Power54mW
Quick Jump:
Technical Specifications
NXP BFG410W,115 technical specifications.
General
| Collector Base Voltage (VCBO) | 10V |
| Collector Emitter Breakdown Voltage | 4.5V |
| Collector Emitter Voltage (VCEO) | 4.5V |
| Contact Plating | Tin |
| Emitter Base Voltage (VEBO) | 1V |
| Frequency | 22GHz |
| Gain | 21dB |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 4.5V |
| Max Collector Current | 12mA |
| Max Frequency | 22GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 54mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 54mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 54mW |
| RoHS Compliant | Yes |
| Transition Frequency | 22GHz |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BFG410W,115 Datasheet
Download the complete datasheet for NXP BFG410W,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
