NPN RF transistor designed for high-frequency applications, featuring a 25 GHz operating and transition frequency. This surface mount device offers a maximum collector current of 30mA and a continuous collector current of 25mA, with a maximum power dissipation of 135mW. It operates within a temperature range of -65°C to 150°C and boasts a gain of 23dB with a minimum hFE of 50. The transistor is housed in an SO package with tin contact plating and is RoHS compliant.
Frequency25 GHz
PackageSO
MountingSurface Mount
PolarityNPN
Quick Jump:
Technical Specifications
NXP BFG424F,115 technical specifications.
General
| Package/Case | SO |
| Collector Base Voltage (VCBO) | 10V |
| Collector Emitter Breakdown Voltage | 4.5V |
| Collector Emitter Voltage (VCEO) | 4.5V |
| Collector-emitter Voltage-Max | 4.5V |
| Contact Plating | Tin |
| Continuous Collector Current | 25mA |
| Emitter Base Voltage (VEBO) | 1V |
| Gain | 23dB |
| hFE Min | 50 |
| Max Breakdown Voltage | 4.5V |
| Max Collector Current | 30mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 135mW |
| Mount | Surface Mount |
| Operating Frequency | 25 GHz |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 135mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 25GHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP BFG424F,115 Datasheet
Download the complete datasheet for NXP BFG424F,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
