RF BJT NPN transistor, single dual emitter configuration, designed for surface mount applications. Features a 15V maximum collector-emitter voltage and 0.07A maximum DC collector current. Offers 300mW maximum power dissipation and a minimum DC current gain of 60 at 20mA/6V. Achieves a typical transition frequency of 9000MHz and a typical noise figure of 2.1dB. Housed in a 4-pin SOT-143B plastic package with gull-wing leads.
PackageSOT-143B
MountingSurface Mount
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Technical Specifications
NXP BFG520,235 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package/Case
SOT-143B
Lead Shape
Gull-wing
Pin Count
4
PCB
3
Tab
Tab
Package Length (mm)
3(Max)
Package Width (mm)
1.4(Max)
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1.1(Max)
Pin Pitch (mm)
1.7|1.9
Package Material
Plastic
Mounting
Surface Mount
Material
Si
Type
NPN
Configuration
Single Dual Emitter
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
15V
Maximum Collector Base Voltage
20V
Maximum Emitter Base Voltage
2.5V
Maximum DC Collector Current
0.07A
Maximum Power Dissipation
300mW
Minimum DC Current Gain
60@20mA@6V
Minimum DC Current Gain Range
50 to 120
Maximum Transition Frequency
9000(Typ)MHz
Maximum Noise Figure
2.1dB
Min Operating Temperature
-65°C
Max Operating Temperature
175°C
Maximum Power 1dB Compression
17(Typ)dBm
Operational Bias Conditions
6V/20mA
Maximum 3rd Order Intercept Point
26(Typ)dBm
Compliance
Cage Code
H1R01
EU RoHS
Yes
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
NXP BFG520,235 Datasheet
Download the complete datasheet for NXP BFG520,235 to view detailed technical specifications.
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