NPN RF transistor, 9 GHz gain bandwidth product and transition frequency, suitable for high-frequency applications. Features a 15V collector-emitter breakdown voltage and 120mA continuous collector current. Encased in a 4-pin SOT-143 (TO-253-4) surface-mount package with tin plating. Operates across a wide temperature range from -65°C to 150°C, with a maximum power dissipation of 400mW. RoHS compliant and lead-free.
Frequency9GHz
PackageTO-253-4
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP BFG540,215 technical specifications.
General
Package/Case
TO-253-4
Collector Base Voltage (VCBO)
20V
Collector Emitter Breakdown Voltage
15V
Collector Emitter Voltage (VCEO)
15V
Collector-emitter Voltage-Max
15V
Contact Plating
Tin
Continuous Collector Current
120mA
Emitter Base Voltage (VEBO)
2.5V
Frequency
9GHz
Gain Bandwidth Product
9GHz
Height
1mm
hFE Min
100
Lead Free
Lead Free
Length
3mm
Max Breakdown Voltage
15V
Max Collector Current
120mA
Max Frequency
9GHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
400mW
Mount
Surface Mount
Number of Elements
1
Operating Frequency
9000 MHz
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
400mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
9GHz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
NXP BFG540,215 Datasheet
Download the complete datasheet for NXP BFG540,215 to view detailed technical specifications.
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