NPN RF transistor, 9 GHz gain bandwidth product and transition frequency, suitable for high-frequency applications. Features a 15V collector-emitter breakdown voltage and 120mA continuous collector current. Encased in a 4-pin SOT-143 (TO-253-4) surface-mount package with tin plating. Operates across a wide temperature range from -65°C to 150°C, with a maximum power dissipation of 400mW. RoHS compliant and lead-free.
Frequency9GHz
PackageTO-253-4
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP BFG540,215 technical specifications.
General
| Package/Case | TO-253-4 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector-emitter Voltage-Max | 15V |
| Contact Plating | Tin |
| Continuous Collector Current | 120mA |
| Emitter Base Voltage (VEBO) | 2.5V |
| Frequency | 9GHz |
| Gain Bandwidth Product | 9GHz |
| Height | 1mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 15V |
| Max Collector Current | 120mA |
| Max Frequency | 9GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 400mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Operating Frequency | 9000 MHz |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 400mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 9GHz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BFG540,215 Datasheet
Download the complete datasheet for NXP BFG540,215 to view detailed technical specifications.
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