NPN RF transistor with a 9 GHz transition frequency and 9 GHz gain bandwidth product. Features a 15V collector-emitter breakdown voltage, 120mA continuous collector current, and 400mW power dissipation. This surface mount transistor is housed in a 4-pin SOT-143 (TO-253-4) package with tin plating. Operating across a wide temperature range from -65°C to 150°C, it offers 18dB gain and 21dBm output power.
Frequency9GHz
PackageTO-253-4
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP BFG540/X,215 technical specifications.
General
Package/Case
TO-253-4
Collector Base Voltage (VCBO)
20V
Collector Emitter Breakdown Voltage
15V
Collector Emitter Voltage (VCEO)
15V
Collector-emitter Voltage-Max
15V
Contact Plating
Tin
Continuous Collector Current
120mA
Emitter Base Voltage (VEBO)
2.5V
Frequency
9GHz
Gain
18dB
Gain Bandwidth Product
9GHz
Height
1mm
Highest Frequency Band
L BAND
Lead Free
Lead Free
Length
3mm
Max Breakdown Voltage
15V
Max Collector Current
120mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
400mW
Mount
Surface Mount
Number of Elements
1
Operating Frequency
9000 MHz
Output Power (dBm)
21dBm
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
400mW
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
9GHz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
NXP BFG540/X,215 Datasheet
Download the complete datasheet for NXP BFG540/X,215 to view detailed technical specifications.
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