
NPN RF transistor designed for 5 GHz wideband applications. Features a 5 GHz transition frequency and gain bandwidth product. Operates with a continuous collector current of 200mA and a maximum collector-emitter voltage of 15V. Packaged in a compact SOT-143 (TO-253-4) surface-mount package with tin plating. Offers a wide operating temperature range from -65°C to 175°C.
NXP BFG590,215 technical specifications.
| Package/Case | TO-253-4 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector-emitter Voltage-Max | 15V |
| Contact Plating | Tin |
| Continuous Collector Current | 200mA |
| Emitter Base Voltage (VEBO) | 3V |
| Frequency | 5GHz |
| Gain Bandwidth Product | 5GHz |
| Height | 1mm |
| Length | 3mm |
| Max Collector Current | 200mA |
| Max Frequency | 5GHz |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 400mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 400mW |
| RoHS Compliant | Yes |
| Transition Frequency | 5GHz |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for NXP BFG590,215 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
