NPN RF transistor with a 5 GHz gain bandwidth product and transition frequency. Features a 15V collector-emitter breakdown voltage and 200mA continuous collector current. Packaged in a 4-pin SOT-143 (TO-253-4) surface mount configuration with tin contact plating. Operates across a temperature range of -65°C to 175°C with a maximum power dissipation of 400mW. RoHS compliant.
NXP BFG590/X,215 technical specifications.
| Package/Case | TO-253-4 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector-emitter Voltage-Max | 15V |
| Contact Plating | Tin |
| Continuous Collector Current | 200mA |
| Emitter Base Voltage (VEBO) | 3V |
| Gain Bandwidth Product | 5GHz |
| Height | 1mm |
| hFE Min | 60 |
| Length | 3mm |
| Max Breakdown Voltage | 15V |
| Max Collector Current | 200mA |
| Max Frequency | 5GHz |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 400mW |
| Mount | Surface Mount |
| Operating Frequency | 5000 MHz |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 5GHz |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for NXP BFG590/X,215 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.