The BFG591 is a NPN RF transistor with a collector emitter breakdown voltage of 15V and a maximum operating temperature of 150°C. It is packaged in a SMALL OUTLINE, R-PDSO-G4 package and is RoHS compliant. The transistor has a maximum power dissipation of 2W and a transition frequency of 7GHz. It is not Reach SVHC compliant. The BFG591 is suitable for use in high-frequency applications.
PolarityNPN
Power2W
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Technical Specifications
NXP BFG591 technical specifications.
General
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Voltage (VCEO) | 15V |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 2W |
| Packaging | Cut Tape |
| Polarity | NPN |
| Power Dissipation | 2W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 7GHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP BFG591 Datasheet
Download the complete datasheet for NXP BFG591 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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