NPN RF transistor designed for wideband applications, operating up to 8 GHz. Features a 10V collector-emitter breakdown voltage and a 50mA continuous collector current. Housed in a compact SOT-143 (TO-253-4) surface-mount package with tin-matte plating. Offers a maximum power dissipation of 380mW and operates across a temperature range of -65°C to 175°C.
Frequency8GHz
PackageTO-253-4
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP BFG67/X,215 technical specifications.
General
| Package/Case | TO-253-4 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 10V |
| Collector Emitter Voltage (VCEO) | 10V |
| Collector-emitter Voltage-Max | 10V |
| Contact Plating | Tin, Matte |
| Continuous Collector Current | 50mA |
| Emitter Base Voltage (VEBO) | 2.5V |
| Frequency | 8GHz |
| Gain Bandwidth Product | 8GHz |
| Height | 1mm |
| Length | 3mm |
| Max Breakdown Voltage | 10V |
| Max Collector Current | 50mA |
| Max Frequency | 8GHz |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 380mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Operating Frequency | 8000 MHz |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 380mW |
| RoHS Compliant | Yes |
| Transition Frequency | 8GHz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BFG67/X,215 Datasheet
Download the complete datasheet for NXP BFG67/X,215 to view detailed technical specifications.
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