NPN bipolar junction transistor (BJT) for surface mount applications, featuring a 9GHz transition frequency and 8V collector-emitter breakdown voltage. This dual-element transistor offers a continuous collector current of 18mA and a minimum hFE of 60. Encased in a 6-lead TSSOP package with tin plating, it operates across a wide temperature range of -65°C to 175°C and supports a maximum power dissipation of 500mW. The component is lead-free, RoHS compliant, and REACH SVHC compliant.
Frequency9GHz
PackageTSSOP
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP BFM505,115 technical specifications.
General
Package/Case
TSSOP
Collector Base Voltage (VCBO)
20V
Collector Emitter Breakdown Voltage
8V
Collector Emitter Voltage (VCEO)
8V
Collector-emitter Voltage-Max
8V
Contact Plating
Tin
Continuous Collector Current
18mA
Emitter Base Voltage (VEBO)
2.5V
Frequency
9GHz
Gain
15dB
Gain Bandwidth Product
9GHz
Height
1mm
hFE Min
60
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
8V
Max Collector Current
18mA
Max Frequency
9GHz
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Elements
2
Operating Frequency
9000 MHz
Output Power
500mW
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
9GHz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
NXP BFM505,115 Datasheet
Download the complete datasheet for NXP BFM505,115 to view detailed technical specifications.
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