NPN bipolar junction transistor (BJT) for surface mount applications, featuring a 9GHz transition frequency and 8V collector-emitter breakdown voltage. This dual-element transistor offers a continuous collector current of 18mA and a minimum hFE of 60. Encased in a 6-lead TSSOP package with tin plating, it operates across a wide temperature range of -65°C to 175°C and supports a maximum power dissipation of 500mW. The component is lead-free, RoHS compliant, and REACH SVHC compliant.
Frequency9GHz
PackageTSSOP
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP BFM505,115 technical specifications.
General
| Package/Case | TSSOP |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 8V |
| Collector Emitter Voltage (VCEO) | 8V |
| Collector-emitter Voltage-Max | 8V |
| Contact Plating | Tin |
| Continuous Collector Current | 18mA |
| Emitter Base Voltage (VEBO) | 2.5V |
| Frequency | 9GHz |
| Gain | 15dB |
| Gain Bandwidth Product | 9GHz |
| Height | 1mm |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 8V |
| Max Collector Current | 18mA |
| Max Frequency | 9GHz |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Operating Frequency | 9000 MHz |
| Output Power | 500mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 9GHz |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BFM505,115 Datasheet
Download the complete datasheet for NXP BFM505,115 to view detailed technical specifications.
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