NPN bipolar junction transistor (BJT) for surface mount applications. Features a 9GHz transition frequency and 8V collector-emitter breakdown voltage. Maximum continuous collector current is 70mA, with a maximum power dissipation of 1W. Packaged in a 6-pin TSSOP (SOT-363) tape and reel. Operating temperature range from -65°C to 175°C.
Frequency9GHz
PackageSOT-363
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP BFM520,115 technical specifications.
General
Package/Case
SOT-363
Collector Base Voltage (VCBO)
20V
Collector Emitter Breakdown Voltage
8V
Collector Emitter Voltage (VCEO)
8V
Collector-emitter Voltage-Max
8V
Contact Plating
Tin
Continuous Collector Current
70mA
Emitter Base Voltage (VEBO)
2.5V
Frequency
9GHz
Gain
15dB
Gain Bandwidth Product
9GHz
Height
1mm
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
8V
Max Collector Current
70mA
Max Frequency
9GHz
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
2
Operating Frequency
9000 MHz
Output Power
1W
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
9GHz
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
NXP BFM520,115 Datasheet
Download the complete datasheet for NXP BFM520,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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