
PNP Bipolar Junction Transistor (BJT) in a SOT-89 surface mount package. Features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 15V. Operates at a maximum frequency of 5GHz with a gain of 12dB. Offers a maximum power dissipation of 1W and an operating temperature range of -65°C to 150°C. Compliant with RoHS standards.
NXP BFQ149,115 technical specifications.
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Voltage (VCEO) | 15V |
| Contact Plating | Tin |
| Emitter Base Voltage (VEBO) | 3V |
| Frequency | 5GHz |
| Gain | 12dB |
| Height | 1.6mm |
| Lead Free | Lead Free |
| Length | 4.6mm |
| Max Breakdown Voltage | 15V |
| Max Collector Current | 100mA |
| Max Frequency | 5GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 1W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 5GHz |
| Width | 2.6mm |
| RoHS | Compliant |
Download the complete datasheet for NXP BFQ149,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
