
NPN RF BJT transistor for surface mount applications, featuring a 4GHz transition frequency and 1W power dissipation. This component offers a 18V collector-emitter breakdown voltage and a continuous collector current of 150mA. Encased in a SOT-89 package with tin plating, it operates across a temperature range of -65°C to 175°C and is RoHS compliant.
NXP BFQ18A,115 technical specifications.
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 25V |
| Collector Emitter Breakdown Voltage | 18V |
| Collector Emitter Voltage (VCEO) | 18V |
| Collector-emitter Voltage-Max | 18V |
| Contact Plating | Tin |
| Continuous Collector Current | 150mA |
| Emitter Base Voltage (VEBO) | 2V |
| Frequency | 4GHz |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 18V |
| Max Collector Current | 150mA |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Operating Frequency | 4000 MHz |
| Output Power | 1W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 4GHz |
| RoHS | Compliant |
Download the complete datasheet for NXP BFQ18A,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
