NPN bipolar junction transistor for high-frequency applications, featuring a 5.5GHz transition frequency and 1W power dissipation. This surface-mount device in a SOT-89 package offers a 15V collector-emitter breakdown voltage and 100mA continuous collector current. Designed for optimal performance, it operates across a wide temperature range from -65°C to 175°C and is RoHS compliant.
Frequency5.5GHz
PackageSOT-89
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP BFQ19,115 technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
20V
Collector Emitter Breakdown Voltage
15V
Collector Emitter Voltage (VCEO)
15V
Collector-emitter Voltage-Max
15V
Contact Plating
Tin
Continuous Collector Current
100mA
Emitter Base Voltage (VEBO)
3.3V
Frequency
5.5GHz
Gain
11.5dB
Gain Bandwidth Product
5.5GHz
Height
1.6mm
Lead Free
Lead Free
Length
4.6mm
Max Breakdown Voltage
15V
Max Collector Current
100mA
Max Frequency
5.5GHz
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
1
Operating Frequency
5500 MHz
Output Power
1W
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1W
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
5.5GHz
Weight
0.004603oz
Width
2.6mm
Compliance
RoHS
Compliant
Datasheet
NXP BFQ19,115 Datasheet
Download the complete datasheet for NXP BFQ19,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.