
NPN bipolar junction transistor (BJT) for high-frequency applications, operating up to 9GHz. Features a 15V collector-emitter breakdown voltage and a continuous collector current of 120mA. Packaged in a SOT-89 surface-mount case with tin plating. Offers a maximum power dissipation of 1.2W and a gain of 13dB, with an operating temperature range of -65°C to 175°C. RoHS compliant and lead-free.
NXP BFQ540,115 technical specifications.
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector-emitter Voltage-Max | 15V |
| Contact Plating | Tin |
| Continuous Collector Current | 120mA |
| Emitter Base Voltage (VEBO) | 2V |
| Frequency | 9GHz |
| Gain | 13dB |
| Height | 1.6mm |
| Lead Free | Lead Free |
| Length | 4.6mm |
| Max Breakdown Voltage | 15V |
| Max Collector Current | 120mA |
| Max Frequency | 9GHz |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Operating Frequency | 9000 MHz |
| Output Power | 1.2W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.2W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 9GHz |
| Width | 2.6mm |
| RoHS | Compliant |
Download the complete datasheet for NXP BFQ540,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
