
NPN bipolar junction transistor (BJT) for high-frequency applications, operating up to 7GHz. Features a 15V collector-emitter breakdown voltage and a continuous collector current of 200mA. Packaged in a SOT-89 surface-mount case with tin plating, this RoHS compliant component offers a maximum power dissipation of 2.25W and operates across a temperature range of -65°C to 175°C.
NXP BFQ591,115 technical specifications.
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector-emitter Voltage-Max | 15V |
| Contact Plating | Tin |
| Continuous Collector Current | 200mA |
| Emitter Base Voltage (VEBO) | 3V |
| Frequency | 7GHz |
| Gain | 11dB |
| Height | 1.6mm |
| Lead Free | Lead Free |
| Length | 4.6mm |
| Max Breakdown Voltage | 15V |
| Max Collector Current | 200mA |
| Max Frequency | 7GHz |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2.25W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Operating Frequency | 7000 MHz (Typ) |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 2.25W |
| RoHS Compliant | Yes |
| Transition Frequency | 7GHz |
| Weight | 0.004603oz |
| Width | 2.6mm |
| RoHS | Compliant |
Download the complete datasheet for NXP BFQ591,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
