NPN bipolar junction transistor (BJT) for RF applications, featuring a 9GHz gain bandwidth product and transition frequency. This surface-mount device operates up to 15V collector-emitter voltage and handles 18mA continuous collector current. Designed for high-frequency performance, it offers a maximum power dissipation of 150mW and operates across a wide temperature range from -65°C to 150°C. Packaged in a compact SC case, it is supplied on tape and reel and is RoHS compliant.
Frequency9GHz
PackageSC
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP BFR505T,115 technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector-emitter Voltage-Max | 15V |
| Contact Plating | Tin |
| Continuous Collector Current | 18mA |
| Emitter Base Voltage (VEBO) | 2.5V |
| Frequency | 9GHz |
| Gain Bandwidth Product | 9GHz |
| Height | 0.85mm |
| Length | 1.8mm |
| Max Collector Current | 18mA |
| Max Frequency | 9GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Operating Frequency | 9000 MHz |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 9GHz |
| Width | 0.9mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BFR505T,115 Datasheet
Download the complete datasheet for NXP BFR505T,115 to view detailed technical specifications.
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