NPN bipolar junction transistor (BJT) designed for high-frequency applications. Features a 9GHz transition frequency and gain bandwidth product, with a maximum operating frequency of 9GHz. Offers a continuous collector current of 70mA and a collector-emitter breakdown voltage of 15V. Packaged in a SOT-416 (SC) surface-mount case with tin plating, this RoHS compliant component operates from -65°C to 150°C with a maximum power dissipation of 150mW.
Frequency9GHz
PackageSC
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP BFR520T,115 technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector-emitter Voltage-Max | 15V |
| Contact Plating | Tin |
| Continuous Collector Current | 70mA |
| Emitter Base Voltage (VEBO) | 2.5V |
| Frequency | 9GHz |
| Gain | 15dB |
| Gain Bandwidth Product | 9GHz |
| Height | 0.85mm |
| Lead Free | Lead Free |
| Length | 1.8mm |
| Max Breakdown Voltage | 15V |
| Max Collector Current | 70mA |
| Max Frequency | 9GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Operating Frequency | 9000 MHz |
| Output Power (dBm) | 17dBm |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 9GHz |
| Width | 0.9mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BFR520T,115 Datasheet
Download the complete datasheet for NXP BFR520T,115 to view detailed technical specifications.
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