NPN bipolar junction transistor (BJT) designed for high-frequency applications. Features a 9GHz transition frequency and gain bandwidth product, with a maximum operating frequency of 9GHz. Offers a continuous collector current of 70mA and a collector-emitter breakdown voltage of 15V. Packaged in a SOT-416 (SC) surface-mount case with tin plating, this RoHS compliant component operates from -65°C to 150°C with a maximum power dissipation of 150mW.
Frequency9GHz
PackageSC
MountingSurface Mount
PolarityNPN
Quick Jump:
Technical Specifications
NXP BFR520T,115 technical specifications.
General
Package/Case
SC
Collector Base Voltage (VCBO)
20V
Collector Emitter Breakdown Voltage
15V
Collector Emitter Voltage (VCEO)
15V
Collector-emitter Voltage-Max
15V
Contact Plating
Tin
Continuous Collector Current
70mA
Emitter Base Voltage (VEBO)
2.5V
Frequency
9GHz
Gain
15dB
Gain Bandwidth Product
9GHz
Height
0.85mm
Lead Free
Lead Free
Length
1.8mm
Max Breakdown Voltage
15V
Max Collector Current
70mA
Max Frequency
9GHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
150mW
Mount
Surface Mount
Number of Elements
1
Operating Frequency
9000 MHz
Output Power (dBm)
17dBm
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
150mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
9GHz
Width
0.9mm
Compliance
RoHS
Compliant
Datasheet
NXP BFR520T,115 Datasheet
Download the complete datasheet for NXP BFR520T,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
